Summary This role will focus on MOCVD research activities to support the development of III-nitride based semiconductor optoelectronic devices. Proactively undertaking research activities to support the achievement of ambitious research targets. The successful candidate will be expected to be self- motivated, strong team-player, and current with the literature in the field of III-nitrides semiconductors.
Key Responsibilities & Tasks
Development of MOCVD growth processes to progress knowledge and understanding of UV LEDs
R&D of III-nitride based semiconductor epitaxial layers and structures in accordance with research goals and activities.
Lead R&D projects to develop next generation of UVLEDs.
Optimization and characterization of III-nitride LED structures.
Undertake data and results analysis to support research activities as well as proactively record and document results in accordance with company processes & procedures.
Contribute to the production yield issues and help troubleshoot material and device issues.
Co-ordinate and collaborate with internal and external research teams.
Prepare project updates for internal and external meetings as
Education & Qualifications
PhD in a relevant engineering field or MS with relevant research experience
Must be a US Citizen or Permanent Resident
Experience
Knowledge and experience of MOCVD and other deposition processes on systems.
Experience of undertaking research activities in a complex field and working to targets and objectives.
Experience of materials characterization techniques
Hands-on cleanroom experience with equipment including, electron-beam deposition, thermal evaporation deposition, lithography, reactive wet and dry etching.
Skills & Knowledge
Understanding of semiconductor materials, technologies, devices and applications.